Sumitomo Electric Industries - FHX35LGT/002

FHX35LGT/002 by Sumitomo Electric Industries

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Manufacturer	Sumitomo Electric Industries
Manufacturer's Part Number	FHX35LGT/002
Description	N-CHANNEL; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 4 V;
Datasheet	FHX35LGT/002 Datasheet

FHX35LGT/002 Technical Details

NAME	DESCRIPTION
Minimum DS Breakdown Voltage:	4 V
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	HIGH ELECTRON MOBILITY
Operating Mode:	DEPLETION MODE
Peak Reflow Temperature (C):	NOT SPECIFIED
Polarity or Channel Type:	N-CHANNEL

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