Sumitomo Electric Industries - FHX35LGT/002

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FHX35LGT/002 by Sumitomo Electric Industries

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Manufacturer Sumitomo Electric Industries
Manufacturer's Part Number FHX35LGT/002
Description N-CHANNEL; Peak Reflow Temperature (C): NOT SPECIFIED; Transistor Element Material: SILICON; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Minimum DS Breakdown Voltage: 4 V;
Datasheet FHX35LGT/002 Datasheet
NAME DESCRIPTION
Minimum DS Breakdown Voltage: 4 V
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Transistor Element Material: SILICON
Field Effect Transistor Technology: HIGH ELECTRON MOBILITY
Operating Mode: DEPLETION MODE
Peak Reflow Temperature (C): NOT SPECIFIED
Polarity or Channel Type: N-CHANNEL
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