Taiwan Semiconductor - TSM2302CXRFG

  1. Home
  2. Taiwan Semiconductor - TSM2302CXRFG
TSM2302CXRFG by Taiwan Semiconductor

Image shown is a representation only.

Manufacturer Taiwan Semiconductor
Manufacturer's Part Number TSM2302CXRFG
Description Small Signal Field-Effect Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 3; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;
Datasheet TSM2302CXRFG Datasheet
NAME DESCRIPTION
Maximum Time At Peak Reflow Temperature (s): 30
Peak Reflow Temperature (C): 260
Terminal Finish: TIN
JESD-609 Code: e3
Moisture Sensitivity Level (MSL): 3
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS84-7-F by Diodes Incorporated

BSS84-7-F

Diodes Incorporated

Diodes Inc. BSS84-7-F is a P-channel FET with 50V DS breakdown voltage, 0.13A max drain current, and 10 ohm RDS(on). Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode at up to 150°C, it has Gull Wing terminals and matte tin finish.
BSS84 by Onsemi

BSS84

Onsemi

BSS84 by Onsemi is a P-CHANNEL FET with 50V DS breakdown voltage and 0.13A max drain current. Ideal for switching applications, it features a single configuration with built-in diode in a small outline package. Operating in enhancement mode, it has a max power dissipation of 0.25W and can withstand temperatures from -55 to 150°C.
BVSS84LT1G by Onsemi

BVSS84LT1G

Onsemi

BVSS84LT1G by Onsemi is a P-CHANNEL FET with 50V DS Breakdown Voltage, 0.13A Drain Current, and 10 ohm On Resistance. Ideal for small outline applications in automotive electronics due to AEC-Q101 compliance and -55 to 150°C operating range.
MMBF170-7 by Diodes Incorporated

MMBF170-7

Diodes Incorporated

Diodes Inc. MMBF170-7 is a N-channel FET with 60V DS breakdown voltage, ideal for switching applications. It features 0.5A max drain current, 5ohm RDS(on), and 5pF Crss. The small outline package with gull wing terminals makes it suitable for surface mount designs in enhancement mode operation up to 150°C.
2N7002DW by Fairchild Semiconductor

2N7002DW

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
ZXMN10A07FTA by Diodes Incorporated

ZXMN10A07FTA

Diodes Incorporated

ZXMN10A07FTA by Diodes Inc. is a N-CHANNEL FET with 100V DS breakdown voltage, 0.56A max drain current, and 0.7 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.806W. The transistor features a small outline package style and can withstand temperatures up to 150°C.
SI9926CDY-T1-GE3 by Vishay Intertechnology

SI9926CDY-T1-GE3

Vishay Intertechnology

Vishay Intertechnology's SI9926CDY-T1-GE3 is a N-channel FET with 2 elements and built-in diode, ideal for switching applications. Features include 20V DS breakdown voltage, 8A max drain current, and 0.018 ohm max drain-source resistance. With a small outline package style and operating up to 150°C, it suits various electronic designs.
2N7002K by Hy Electronic

2N7002K

Hy Electronic

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Elements: 1; Additional Features: ULTRA LOW RESISTANCE; Package Body Material: PLASTIC/EPOXY;
SQ2309ES-T1_GE3 by Vishay Intertechnology

SQ2309ES-T1_GE3

Vishay Intertechnology

The Vishay Intertechnology SQ2309ES-T1_GE3 is a P-CHANNEL FET with 60V DS breakdown voltage and 1.7A max drain current. Ideal for applications requiring small outline, it operates in enhancement mode with 0.335 ohm RDS(on) and features built-in diode in a gull wing package.
BC548B by Itt Components

BC548B

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; No. of Elements: 1;
BS170P by Diodes Incorporated

BS170P

Diodes Incorporated

The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.
BVSS138LT1G by Onsemi

BVSS138LT1G

Onsemi

BVSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications, it operates b/w -55 to 150 °C and complies with AEC-Q101 standard.
ZVP2106AM1 by Zetex Plc

ZVP2106AM1

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .28 A; Minimum DS Breakdown Voltage: 60 V; Peak Reflow Temperature (C): 235;
BSS138P by Changzhou Galaxy Century Microelectronics

BSS138P

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; Additional Features: LOGIC LEVEL COMPATIBLE; Maximum Operating Temperature: 150 Cel;
BSS84 by Siemens

BSS84

Siemens

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain-Source On Resistance: 10 ohm; Terminal Finish: Tin/Lead (Sn/Pb);
FDV301N by Onsemi

FDV301N

Onsemi

FDV301N by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 0.22A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.35W. This small outline transistor has a temperature range of -55 to 150 °C and features a built-in diode for efficient performance.
BSS138W-7-F by Multicomp Pro

BSS138W-7-F

Multicomp Pro

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Element Material: SILICON; No. of Elements: 1;
SI4816BDY-T1-E3 by Vishay Intertechnology

SI4816BDY-T1-E3

Vishay Intertechnology

SI4816BDY-T1-E3 by Vishay Intertechnology is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Drain Current of 5.8A and Min DS Breakdown Voltage of 30V. Ideal for applications requiring high drain current in small outline packages, operating b/w -55 to 150°C.
BSS123,215 by Nexperia

BSS123,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
2N7002PW,115 by Nexperia

2N7002PW,115

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; JESD-609 Code: e3; No. of Elements: 1;