Taiwan Semiconductor - TSM2312CXRFG

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TSM2312CXRFG by Taiwan Semiconductor

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Manufacturer Taiwan Semiconductor
Manufacturer's Part Number TSM2312CXRFG
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Finish: TIN; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;
Datasheet TSM2312CXRFG Datasheet
NAME DESCRIPTION
Other Names: TSM2312CX RFGDKR
1801-TSM2312CXRFGDKR
TSM2312CXRFGDKR-ND
TSM2312CX RFGTR-ND
TSM2312CX RFGCT-ND
TSM2312CX RFGTR
TSM2312CXRFGDKR
TSM2312CXRFGTR-ND
TSM2312CXRFGTR
1801-TSM2312CXRFGTR
TSM2312CX RFGDKR-ND
TSM2312CXRFG-ND
TSM2312CXRFGCT-ND
TSM2312CX RFGCT
1801-TSM2312CXRFGCT
TSM2312CXRFGCT
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.9 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .033 ohm
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