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| Manufacturer | Taiwan Semiconductor |
|---|---|
| Manufacturer's Part Number | TSM2N7002AKDCU6RFG |
| Description | N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .24 W; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | TSM2N7002AKDCU6RFG Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
1801-TSM2N7002AKDCU6 TSM2N7002KDCU6 1801-TSM2N7002AKDCU6RFGTR 1801-TSM2N7002KDCU6DKR-ND TSM2N7002AKDCU6 1801-TSM2N7002KDCU6TR 1801-TSM2N7002AKDCU6RFGDKR 1801-TSM2N7002AKDCU6RFG 1801-TSM2N7002KDCU6CT-ND 1801-TSM2N7002AKDCU6RFG-ND 1801-TSM2N7002KDCU6DKR 1801-TSM2N7002AKDCU6RFGCT 1801-TSM2N7002KDCU6CT 1801-TSM2N7002AKDCU6-ND 1801-TSM2N7002KDCU6TR-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Feedback Capacitance (Crss): | 3 pF |
| Maximum Drain Current (ID): | .22 A |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Minimum Operating Temperature: | -55 Cel |
| No. of Terminals: | 6 |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Power Dissipation (Abs): | .24 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Power Dissipation Ambient: | .24 W |
| Maximum Drain-Source On Resistance: | 2.5 ohm |









