UF28100M by TE Connectivity | Transistors

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Manufacturer	TE Connectivity
Manufacturer's Part Number	UF28100M
Description	N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Power Dissipation Ambient: 250 W; Maximum Drain Current (ID): 12 A;
Datasheet	UF28100M Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Drain Current (ID):	12 A
Sub-Category:	FET General Purpose Power
Surface Mount:	NO
No. of Terminals:	4
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	ULTRA HIGH FREQUENCY BAND
Maximum Operating Temperature:	200 Cel
Case Connection:	SOURCE
Maximum Power Dissipation Ambient:	250 W
Minimum Power Gain (Gp):	10 dB
Maximum Feedback Capacitance (Crss):	24 pF
Polarity or Channel Type:	N-CHANNEL
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	65 V
Maximum Drain Current (Abs) (ID):	12 A

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