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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | 3N208 |
| Description | P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Form: WIRE; Maximum Drain-Source On Resistance: 400 ohm; |
| Datasheet | 3N208 Datasheet |
| In Stock | 209 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | METAL |
| Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | CHOPPER |
| Maximum Drain Current (ID): | .1 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | .3 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | CYLINDRICAL |
| JESD-30 Code: | O-MBCY-W8 |
| No. of Elements: | 2 |
| Package Shape: | ROUND |
| Terminal Form: | WIRE |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 200 Cel |
| Case Connection: | ISOLATED |
| Maximum Drain-Source On Resistance: | 400 ohm |
| Maximum Feedback Capacitance (Crss): | 2.5 pF |
| JEDEC-95 Code: | TO-76 |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 25 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | .1 A |
