Texas Instruments - 3N216

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3N216 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number 3N216
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Qualification: Not Qualified; Peak Reflow Temperature (C): NOT SPECIFIED;
Datasheet 3N216 Datasheet
In Stock1,856
NAME DESCRIPTION
Package Body Material: METAL
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .05 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
No. of Terminals: 4
Maximum Power Dissipation (Abs): .36 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-MBCY-W4
No. of Elements: 1
Package Shape: ROUND
Terminal Form: WIRE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 200 Cel
Case Connection: SUBSTRATE
Maximum Drain-Source On Resistance: 50 ohm
Maximum Feedback Capacitance (Crss): 2 pF
JEDEC-95 Code: TO-72
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .05 A
Peak Reflow Temperature (C): NOT SPECIFIED
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