Texas Instruments - CMS88D4MB36-8

LPDDR4 DRAM;

MT48LC16M16A2B4-6A:G by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a compact grid array package.

IS43TR16256BL-125KBL by Integrated Silicon Solution is a 256MX16 DDR3L DRAM with synchronous operation and self-refresh capability. It features a package style of GRID ARRAY, THIN PROFILE, FINE PITCH suitable for surface mount applications. With a memory density of 4294967296 bit, it is ideal for multi-bank page burst access in various electronic devices.

Samsung M471B5173QH0-YK0 DDR DRAM Module features 512MX64 organization, 1.35V nominal voltage, and 512M words code. Ideal for applications requiring high memory density and single bank page burst access mode in microelectronic assemblies.

Micron Technology's MT41K512M16TNA-125IT:E is a DDR3L DRAM with 512MX16 organization, operating at 800 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data access.

SYNCHRONOUS DRAM; JESD-609 Code: e3; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 3;

W989D6DBGX6E by Winbond Electronics is a 32MX16 SDRAM with 536MB memory density. Operating at 1.8V, it offers synchronous self-refresh mode and fast access time of 5ns. Ideal for applications requiring high-speed data processing in compact devices like smartphones and tablets.

MT48LC32M16A2P-75IT:C by Micron Technology is a 32MX16 DRAM with 3.3V supply, operating at 133MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring fast access times and high memory density in a small outline package.

Samsung's K4S281632I-UC60 is a 3.3V DRAM with 8MX16 organization, 166 MHz clock frequency, and 70°C operating temperature. Ideal for applications requiring high-speed memory access in commercial-grade devices.

DDR4 DRAM MODULE;

Samsung's K4S641632K-UC75 is a 4MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability. Package style: small outline, thin profile, suitable for commercial temperature grade environments.

Kingston's D2516ECMDXGJD-U DDR3L DRAM features 256MX16 organization, 1.35V supply voltage, and 95°C max operating temp. Ideal for applications requiring high memory density and synchronous operation in a grid array package with self-refresh capability.

Samsung M471A1K43DB1-CTD DDR4 DRAM Module operates at 1333 MHz with 1.2V, offering 1073741824 words memory density and 64-bit width. Ideal for high-performance computing applications due to its synchronous operation and single bank page burst access mode.

IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.

Micron Technology's MT40A2G8AG-062EAUT:F is a DDR4 DRAM with 2GX8 organization, operating at a max clock frequency of 1600 MHz. It has a memory density of 17.18 Gb and is suitable for applications requiring high-speed synchronous memory.

Micron Technology's MT40A2G8JE-062EAAT:E is a DDR4 DRAM with 2GX8 organization, operating at 1600 MHz. It features a common I/O type, synchronous mode, and self-refresh capability. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package.

Micron Technology's MT48LC4M32B2P-6AIT:L is a 4MX32 DRAM with 3.3V supply, operating at -40 to 85 °C. It features synchronous operation, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring fast access time, high memory density, and low power consumption.

Micron Technology's MT53E128M32D2DS-053AIT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 1866 MHz. It features synchronous operation, self-refresh capability, and AEC-Q100 screening level. Ideal for industrial applications requiring high memory density and low standby voltage.

IS43QR16256B-075UBL by Integrated Silicon Solution is a 256MX16 DDR4 DRAM with 1333.33 MHz clock frequency, suitable for applications requiring high-speed memory access. It operates synchronously at 1.2V and features dual bank page burst access mode, making it ideal for systems demanding efficient data processing. The package style is grid array with thin profile and fine pitch, facilitating compact design integration.

Samsung's M386A8K40BM1-CRC is a DDR DRAM MODULE with 8GX72 organization, 72 memory width, and 618475290624 bit memory density. It operates synchronously at 1.2V, featuring self-refresh capability for various applications requiring high-speed data processing in microelectronic assemblies.