Texas Instruments - CSD13306WT

CSD13306WT by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD13306WT
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: BALL; Package Style (Meter): GRID ARRAY; Moisture Sensitivity Level (MSL): 1;
Datasheet CSD13306WT Datasheet
In Stock412
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.5 A
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 6
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .0155 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 294 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 12 V
Additional Features: ULTRA LOW RESISTANCE
Peak Reflow Temperature (C): 260
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