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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | CSD13380F3 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; JESD-609 Code: e4; Maximum Operating Temperature: 150 Cel; Package Style (Meter): GRID ARRAY; |
Datasheet | CSD13380F3 Datasheet |
In Stock | 219,523 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | 30 |
Configuration: | SINGLE WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Drain Current (ID): | 2.1 A |
Surface Mount: | YES |
Terminal Finish: | NICKEL GOLD |
No. of Terminals: | 3 |
Terminal Position: | BOTTOM |
Package Style (Meter): | GRID ARRAY |
JESD-30 Code: | R-PBGA-B3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | BUTT |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .092 ohm |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 12.5 pF |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e4 |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 12 V |
Peak Reflow Temperature (C): | 260 |