Texas Instruments - CSD18536KTTT

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CSD18536KTTT by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD18536KTTT
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Avalanche Energy Rating (EAS): 819 mJ; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Element Material: SILICON;
Datasheet CSD18536KTTT Datasheet
In Stock2,322
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 200 A
Maximum Pulsed Drain Current (IDM): 400 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0022 ohm
Moisture Sensitivity Level (MSL): 2
Avalanche Energy Rating (EAS): 819 mJ
Other Names: 296-44122-1
296-44122-2
CSD18536KTTT-ND
296-44122-6
Maximum Feedback Capacitance (Crss): 51 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 60 V
Additional Features: AVALANCHE RATED
Peak Reflow Temperature (C): 260
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