Texas Instruments - CSD19534KCS

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CSD19534KCS by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD19534KCS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Case Connection: DRAIN; Minimum DS Breakdown Voltage: 100 V; Avalanche Energy Rating (EAS): 54 mJ;
Datasheet CSD19534KCS Datasheet
In Stock17,362
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 100 A
Maximum Pulsed Drain Current (IDM): 138 A
Surface Mount: NO
Terminal Finish: MATTE TIN
No. of Terminals: 3
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .02 ohm
Avalanche Energy Rating (EAS): 54 mJ
Maximum Feedback Capacitance (Crss): 7.4 pF
JEDEC-95 Code: TO-220
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 100 V
Additional Features: AVALANCHE RATED
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