CSD19535KCS by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	CSD19535KCS
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JESD-609 Code: e3; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 451 mJ;
Datasheet	CSD19535KCS Datasheet
In Stock	480

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	150 A
Maximum Pulsed Drain Current (IDM):	400 A
Surface Mount:	NO
Terminal Finish:	MATTE TIN
No. of Terminals:	3
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Drain-Source On Resistance:	.0044 ohm
Avalanche Energy Rating (EAS):	451 mJ
Other Names:	2156-CSD19535KCS -296-37288-5-ND 296-37288-5 -CSD19535KCS-NDR CSD19535KCS-ND TEXTISCSD19535KCS -296-37288-5 296-37288-5-NDR
Maximum Feedback Capacitance (Crss):	38 pF
JEDEC-95 Code:	TO-220
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e3
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	100 V
Additional Features:	AVALANCHE RATED

Pricing (USD)

Qty.	Unit Price	Ext. Price
480	-	-

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