Texas Instruments - CSD25301W1015

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CSD25301W1015 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD25301W1015
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Terminal Form: BALL; Package Style (Meter): GRID ARRAY;
Datasheet CSD25301W1015 Datasheet
In Stock4,766
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.2 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.5 W
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .22 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 40 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 2.2 A
Peak Reflow Temperature (C): 260
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