Texas Instruments - CSD25310Q2T

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CSD25310Q2T by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD25310Q2T
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Form: NO LEAD; Transistor Element Material: SILICON; Peak Reflow Temperature (C): 260;
Datasheet CSD25310Q2T Datasheet
In Stock26,043
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 9.6 A
Maximum Pulsed Drain Current (IDM): 48 A
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: SOURCE
Maximum Drain-Source On Resistance: .089 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 21.7 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Peak Reflow Temperature (C): 260
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