Image shown is a representation only.
| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | CSD75205W1015 |
| Description | P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .75 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Elements: 2; |
| Datasheet | CSD75205W1015 Datasheet |
| In Stock | 3,914 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | UNSPECIFIED |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.2 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 6 |
| Maximum Power Dissipation (Abs): | .75 W |
| Terminal Position: | BOTTOM |
| Package Style (Meter): | GRID ARRAY |
| JESD-30 Code: | R-XBGA-B6 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | BALL |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .18 ohm |
| Maximum Feedback Capacitance (Crss): | 33 pF |
| Polarity or Channel Type: | P-CHANNEL |
| Minimum DS Breakdown Voltage: | 20 V |
| Qualification: | Not Qualified |
| Maximum Drain Current (Abs) (ID): | 1.2 A |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
