Texas Instruments - CSD75208W1015

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CSD75208W1015 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number CSD75208W1015
Description P-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 20 V; No. of Terminals: 6;
Datasheet CSD75208W1015 Datasheet
In Stock40,820
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.6 A
Surface Mount: YES
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 6
Terminal Position: BOTTOM
Package Style (Meter): GRID ARRAY
JESD-30 Code: R-PBGA-B6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: BALL
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .15 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 10 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e1
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Peak Reflow Temperature (C): 260
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