CSD85302L by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	CSD85302L
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Minimum Operating Temperature: -55 Cel; JESD-30 Code: S-PBGA-B4; Terminal Form: BUTT;
Datasheet	CSD85302L Datasheet
In Stock	3,029

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Surface Mount:	YES
Terminal Finish:	NICKEL GOLD
No. of Terminals:	4
Terminal Position:	BOTTOM
Package Style (Meter):	GRID ARRAY
JESD-30 Code:	S-PBGA-B4
No. of Elements:	2
Package Shape:	SQUARE
Terminal Form:	BUTT
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	SOURCE
Moisture Sensitivity Level (MSL):	1
Maximum Feedback Capacitance (Crss):	79 pF
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum Operating Temperature:	-55 Cel
Minimum DS Breakdown Voltage:	20 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,029	$0.157	$475.553

RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

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