Texas Instruments - JAN2N4948

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JAN2N4948 by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number JAN2N4948
Description Unijunction Transistors; Qualification: Not Qualified;
In Stock914
NAME DESCRIPTION
Qualification: Not Qualified
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2N489A by Texas Instruments

2N489A

Texas Instruments

2N489A by Texas Instruments is a Unijunction Transistor for switching applications. It has a max emitter current of 70mA, operating temperature range from -65 to 140°C, and max power dissipation of 0.45W. With a package style of cylindrical and isolated case connection, it offers reliable performance in various electronic circuits.
2N4948 by Onsemi

2N4948

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Peak Point Current: 2 mA; Maximum Static Inter-Base Resistance: 12 kohm; Transistor Element Material: SILICON;
2N4949 by Texas Instruments

2N4949

Texas Instruments

2N4949 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA and max power dissipation of 0.36W. It is commonly used for switching applications due to its single configuration and silicon transistor element material.
2N1671C by Onsemi

2N1671C

Onsemi

The Onsemi 2N1671C is a Unijunction Transistor (UFT) with max emitter current of 50mA, max power dissipation of 0.45W, and max operating temp of 140 °C. It is used for switching applications due to its single configuration and silicon element material.
JAN2N4948 by Texas Instruments

JAN2N4948

Texas Instruments

Unijunction Transistors; Qualification: Not Qualified;
NTE6410 by Nte Electronics

NTE6410

Nte Electronics

NTE6410 by Nte Electronics is a plastic/epoxy unijunction transistor with single configuration for switching applications. It has a max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. Ideal for low-power switching circuits due to its compact cylindrical package design and silicon element material.
2N4870 by Central Semiconductor

2N4870

Central Semiconductor

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
2N492B by Onsemi

2N492B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Package Shape: ROUND; Package Body Material: METAL;
2N4853 by Texas Instruments

2N4853

Texas Instruments

2N4853 by Texas Instruments is a Unijunction Transistor with max emitter current of 50mA, max inter-base voltage of 35V, and max power dissipation of 0.3W. It is used for switching applications due to its single configuration and silicon element material.
2N4892 by Texas Instruments

2N4892

Texas Instruments

2N4892 by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 50mA, ideal for switching applications. It has a max operating temperature of 150°C and min operating temperature of -55°C. The transistor element material is silicon, with a package shape of ROUND and terminal form WIRE.
2N493A by Texas Instruments

2N493A

Texas Instruments

2N493A by Texas Instruments is a Unijunction Transistor (UFT) with a max emitter current of 70mA, ideal for switching applications. It has a max inter-base voltage of 65V and can operate in temperatures ranging from -65 to 140°C. The transistor element material is silicon, and it features a package style of cylindrical with isolated case connection.
2N2418B by Onsemi

2N2418B

Onsemi

The Onsemi 2N2418B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for low current operations at temperatures ranging from -65 to 140 °C.
2N4870 by Philips Components

2N4870

Philips Components

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Package Style (Meter): CYLINDRICAL; Package Shape: ROUND; JEDEC-95 Code: TO-92;
2N4870 by Motorola

2N4870

Motorola

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Minimum Valley Point Current: 2 mA;
2N2646 by Thomson Consumer Electronics

2N2646

Thomson Consumer Electronics

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Inter-base Voltage: 35 V; Maximum Emitter Current: 50 mA; Minimum Valley Point Current: 4 mA;
JAN2N491A by Texas Instruments

JAN2N491A

Texas Instruments

JAN2N491A by Texas Instruments is a Unijunction Transistor with 3 terminals. It has a min valley point current of 8mA and max peak point current of 12mA. This transistor, made of silicon, is commonly used in applications requiring isolated case connection.
2N4870 by General Electric Solid State

2N4870

General Electric Solid State

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 125 Cel; Minimum Intrinsic Stand-off Ratio: .56; Minimum Static Inter-Base Resistance: 4 kohm;
2N2646 by Semiconductors

2N2646

Semiconductors

Unijunction Transistors; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Maximum Intrinsic Stand-off Ratio: .75; Minimum Intrinsic Stand-off Ratio: .56; Maximum Static Inter-Base Resistance: 9.1 kohm;
2N2419B by Onsemi

2N2419B

Onsemi

The Onsemi 2N2419B is a Unijunction Transistor with max emitter current of 70mA, max inter-base voltage of 65V, and max power dissipation of 0.3W. It is used in applications requiring a single configuration transistor for functions like pulse generation or timing circuits.
2N490B by Onsemi

2N490B

Onsemi

Unijunction Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .45 W; Transistor Element Material: SILICON; Package Shape: ROUND;