Texas Instruments - SM44C256-12HJ

  1. Home
  2. Texas Instruments - SM44C256-12HJ
SM44C256-12HJ by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number SM44C256-12HJ
Description DRAMs;
Datasheet SM44C256-12HJ Datasheet
In Stock940
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
940 - -

Popular Products

Category Top Products

IS43TR16512A-15HBLI by Integrated Silicon Solution

IS43TR16512A-15HBLI

Integrated Silicon Solution

IS43TR16512A-15HBLI by Integrated Silicon Solution is a 512MX16 DDR3 DRAM with 1.5V supply voltage, synchronous operation, and self-refresh capability. It features a low-profile grid array package suitable for applications requiring dual bank page burst access mode and 16-bit memory width. Ideal for high-performance computing devices needing reliable memory solutions.
KVR16LS11S6/2 by Kingston Technology Company

KVR16LS11S6/2

Kingston Technology Company

Kingston's KVR16LS11S6/2 DDR3L DRAM Module features 256MX64 organization, 1.35V nominal voltage, and operates synchronously. Ideal for applications requiring low power consumption and high memory density in microelectronic assemblies with a max operating temperature of 85°C.
MT48LC16M16A2P-75IT:D by Micron Technology

MT48LC16M16A2P-75IT:D

Micron Technology

Micron Technology's MT48LC16M16A2P-75IT:D is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. Ideal for industrial applications, it offers synchronous operation, self-refresh capability, and a compact thin profile package for space-constrained designs.
MT48LC16M16A2B4-6AIT:G by Micron Technology

MT48LC16M16A2B4-6AIT:G

Micron Technology

MT48LC16M16A2B4-6AIT:G by Micron Technology is a 16MX16 Synchronous DRAM with 167 MHz clock frequency, 5.4 ns access time, and 8192 refresh cycles. It is ideal for industrial applications requiring high-speed memory operations in a compact grid array package with very thin profile and fine pitch design.
MT40A1G16TB-062EIT:F by Micron Technology

MT40A1G16TB-062EIT:F

Micron Technology

Micron Technology's MT40A1G16TB-062EIT:F is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features a thin profile grid array package and supports multi-bank page burst access mode. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT47H64M16NF-25EAIT:M by Micron Technology

MT47H64M16NF-25EAIT:M

Micron Technology

Micron Technology's MT47H64M16NF-25EAIT:M is a DDR2 DRAM with 64MX16 organization, operating at 400 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in automotive electronics and industrial control systems.
MT53D512M16D1DS-046AIT:D by Micron Technology

MT53D512M16D1DS-046AIT:D

Micron Technology

Micron Technology's MT53D512M16D1DS-046AIT:D is a LPDDR4 DRAM with 512MX16 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
S27KL0642DPBHI023 by Infineon Technologies

S27KL0642DPBHI023

Infineon Technologies

Infineon Technologies' S27KL0642DPBHI023 is a 8MX8 CMOS DRAM with synchronous operation and self-refresh capability. It has a max clock frequency of 166 MHz and a memory density of 67108864 bit. This memory IC type, known as HYPERRAM, is commonly used in applications requiring high-speed data storage and retrieval.
W631GU6NB09I by Winbond Electronics

W631GU6NB09I

Winbond Electronics

Winbond Electronics' W631GU6NB09I is a DDR3L DRAM with 64MX16 organization, operating at 1066 MHz. Featuring synchronous mode and self-refresh capability, it has a memory density of 1073741824 bit. Ideal for industrial applications requiring high-speed data processing in compact devices.
AS4C8M16SA-7TCNTR by Alliance Memory

AS4C8M16SA-7TCNTR

Alliance Memory

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 54; Package Code: TSOP2; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
NT5CC128M16JR-EKI by Nanya Technology

NT5CC128M16JR-EKI

Nanya Technology

NT5CC128M16JR-EKI by Nanya Technology is a DDR DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for industrial applications, this memory IC has a memory density of 2147483648 bits and operates in a temperature range from -40 to 95°C.
KM416S4020AT-G10 by Samsung

KM416S4020AT-G10

Samsung

Samsung's KM416S4020AT-G10 is a 4MX16 DRAM with 3.3V supply, operating at 100MHz. It features a small outline, thin profile package and offers 67108864 bits memory density. Ideal for applications requiring high-speed data processing in commercial temperature environments.
MT40A1G16RC-062E:BTR by Micron Technology

MT40A1G16RC-062E:BTR

Micron Technology

DDR4 DRAM; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Tin/Silver/Copper (Sn/Ag/Cu); JESD-609 Code: e1;
S27KL0642GABHI020 by Cypress Semiconductor

S27KL0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Maximum Standby Current: .00025 Amp; No. of Functions: 1;
MT41K128M16HA-15E:D by Micron Technology

MT41K128M16HA-15E:D

Micron Technology

Micron Technology's MT41K128M16HA-15E:D is a DDR3L DRAM with 128MX16 organization, operating at 667 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT48LC4M16A2P-75IT:GTR by Micron Technology

MT48LC4M16A2P-75IT:GTR

Micron Technology

Micron Technology's MT48LC4M16A2P-75IT:GTR is a 3.3V Synchronous DRAM with 4MX16 organization, operating at -40 to 85 °C. It features self-refresh mode, industrial temp grade, and Gull Wing terminal form. Ideal for applications requiring fast access time and high memory density.
AS4C16M16SA-6BINTR by Alliance Memory

AS4C16M16SA-6BINTR

Alliance Memory

Alliance Memory's AS4C16M16SA-6BINTR is a 16MX16 Synchronous DRAM with 166 MHz clock frequency, 85°C operating temp. Ideal for industrial applications, it features common I/O type, self-refresh mode, and thin profile grid array package.
IS42S16320D-7BLI by Integrated Silicon Solution

IS42S16320D-7BLI

Integrated Silicon Solution

IS42S16320D-7BLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with a max clock frequency of 143 MHz. It is commonly used in industrial applications and operates at a temperature range of -40 to 85 °C.
S70KS1282GABHI020 by Cypress Semiconductor

S70KS1282GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
KM44C1000BLJ-6 by Samsung

KM44C1000BLJ-6

Samsung

Samsung's KM44C1000BLJ-6 is a 1MX4 DRAM with 1048576 words and 4194304 bit memory density. Operating at 5V, it offers a max access time of 60ns for fast page access applications. With a package size of 17.145mm x 7.62mm x 3.68mm, this CMOS technology-based chip is ideal for commercial temperature grade environments.