Texas Instruments - SMJ4C1027-15JD

  1. Home
  2. Texas Instruments - SMJ4C1027-15JD
SMJ4C1027-15JD by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number SMJ4C1027-15JD
Description DRAMs;
Datasheet SMJ4C1027-15JD Datasheet
In Stock2,833
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,833 - -

Popular Products

Category Top Products

NT5CC256M16ER-EKI by Nanya Technology

NT5CC256M16ER-EKI

Nanya Technology

NT5CC256M16ER-EKI by Nanya Technology is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for industrial applications requiring high memory density and reliable performance in a compact grid array package.
NT5TU128M8HE-ACI by Nanya Technology

NT5TU128M8HE-ACI

Nanya Technology

NT5TU128M8HE-ACI by Nanya Technology is a DDR2 DRAM with 128MX8 organization, operating at 400 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast access times.
MT42L128M32D1TK-25AAT:A by Micron Technology

MT42L128M32D1TK-25AAT:A

Micron Technology

Micron Technology's MT42L128M32D1TK-25AAT:A is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Ideal for applications requiring high memory density and low power consumption in compact devices.
MT41K512M16VRN-107IT:P by Micron Technology

MT41K512M16VRN-107IT:P

Micron Technology

MT41K512M16VRN-107IT:P by Micron Technology is a DDR3L DRAM with 512MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade suitability. Ideal for applications requiring high memory density and single bank page burst access mode.
M368L3223FTN-CCC by Samsung

M368L3223FTN-CCC

Samsung

Samsung's M368L3223FTN-CCC DDR DRAM MODULE features 32MX64 organization, 2147483648 bit memory density, and 200 MHz max clock frequency. Ideal for applications requiring high-speed data processing and large memory capacity in commercial temperature environments.
MT40A256M16GE-083EAUT:B by Micron Technology

MT40A256M16GE-083EAUT:B

Micron Technology

Micron Technology's MT40A256M16GE-083EAUT:B is a DDR4 DRAM with 256MX16 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for automotive applications due to AEC-Q100 screening level and thin profile grid array package style.
MT46H32M16LFBF-6IT by Micron Technology

MT46H32M16LFBF-6IT

Micron Technology

LPDDR1 DRAM; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
NT5AD512M16A4-GZ by Nanya Technology

NT5AD512M16A4-GZ

Nanya Technology

NT5AD512M16A4-GZ by Nanya Technology is a DDR4 DRAM with 512MX16 organization, operating at 1200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory with a thin profile and fine pitch package style.
MT40A1G8WE-075E:B by Micron Technology

MT40A1G8WE-075E:B

Micron Technology

Micron Technology's MT40A1G8WE-075E:B is a DDR4 DRAM with 1GX8 organization, operating at 1333.33 MHz. It features a thin profile grid array package suitable for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
EDB4432BBBJ-1DAIT-F-D by Micron Technology

EDB4432BBBJ-1DAIT-F-D

Micron Technology

Micron Technology's EDB4432BBBJ-1DAIT-F-D is a 128MX32 LPDDR2 DRAM with 134 terminals, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for industrial applications requiring high memory density and low power consumption.
IS43TR16512BL-125KBLI by Integrated Silicon Solution

IS43TR16512BL-125KBLI

Integrated Silicon Solution

IS43TR16512BL-125KBLI by Integrated Silicon Solution is a 512MX16 DDR3L DRAM with 800 MHz clock frequency. Operating at 1.35V, it features synchronous mode and self-refresh capability. Ideal for industrial applications requiring high memory density and fast data access speeds.
MT41K256M16TW-107AIT:P by Micron Technology

MT41K256M16TW-107AIT:P

Micron Technology

Micron Technology's MT41K256M16TW-107AIT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a low supply voltage of 1.35V and is suitable for industrial applications requiring high memory density and fast data access speeds. The package style is grid array, thin profile, fine pitch with common I/O type and self-refresh capability.
MT41J128M16HA-125IT:D by Silicon360

MT41J128M16HA-125IT:D

Silicon360

DDR3 DRAM; No. of Terminals: 96; Package Code: TFBGA; Package Shape: RECTANGULAR; JESD-30 Code: R-PBGA-B96; Operating Mode: SYNCHRONOUS;
IS42VS16160J-75TLI by Integrated Silicon Solution

IS42VS16160J-75TLI

Integrated Silicon Solution

IS42VS16160J-75TLI by Integrated Silicon Solution is a 16MX16 Synchronous DRAM with 1.8V supply voltage, operating at -40 to 85 °C. It features self-refresh mode, small outline package, and industrial temperature grade suitable for memory-intensive applications in various industries.
MT16JSF25664HY-1G4D1 by Micron Technology

MT16JSF25664HY-1G4D1

Micron Technology

Micron Technology's MT16JSF25664HY-1G4D1 is a 256MX64 DDR DRAM MODULE with 17179869184-bit memory density. Operating at 1.5V, it features synchronous mode and self-refresh capability. Ideal for commercial applications, this rectangular package offers dual bank page burst access mode and CMOS technology.
IS43TR16256BL-107MBLI by Integrated Silicon Solution

IS43TR16256BL-107MBLI

Integrated Silicon Solution

IS43TR16256BL-107MBLI by Integrated Silicon Solution is a 256MX16 DDR3 DRAM with 1.35V supply, operating from -40 to 95°C. Featuring synchronous mode and self-refresh, it has a thin profile grid array package suitable for industrial applications requiring high memory density and multi-bank page burst access.
MT48LC4M32B2B5-7:G by Micron Technology

MT48LC4M32B2B5-7:G

Micron Technology

SYNCHRONOUS DRAM; Temperature Grade: COMMERCIAL; No. of Terminals: 90; Package Code: VFBGA; Refresh Cycles: 4096; Package Shape: RECTANGULAR;
AS4C512M8D4-83BCN by Alliance Memory

AS4C512M8D4-83BCN

Alliance Memory

Alliance Memory's AS4C512M8D4-83BCN is a DDR4 DRAM with 512MX8 organization, operating at up to 1200 MHz. It features common I/O type, self-refresh mode, and synchronous operation. Ideal for applications requiring high-speed memory access in compact devices.
S70KS1282GABHB020 by Cypress Semiconductor

S70KS1282GABHB020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Minimum Supply Voltage (Vsup): 1.7 V; Memory Width: 8;
AS4C16M16SA-6TIN by Alliance Memory

AS4C16M16SA-6TIN

Alliance Memory

AS4C16M16SA-6TIN by Alliance Memory is a 16MX16 Synchronous DRAM with a clock frequency of 166 MHz. It operates at a voltage of 3.3V and has a temperature range of -40 to 85°C. This memory chip is commonly used in industrial applications requiring high-speed data storage and retrieval.