Texas Instruments - TGA8622SCMX

  1. Home
  2. Texas Instruments - TGA8622SCMX
TGA8622SCMX by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TGA8622SCMX
Description WIDE BAND MEDIUM POWER; Maximum Voltage Standing Wave Ratio: 2.3; Construction: COMPONENT; Minimum Operating Frequency: 2000 MHz; Maximum Operating Frequency: 20000 MHz;
Datasheet TGA8622SCMX Datasheet
In Stock1,041
NAME DESCRIPTION
Maximum Voltage Standing Wave Ratio: 2.3
Construction: COMPONENT
Minimum Operating Frequency: 2000 MHz
Maximum Operating Frequency: 20000 MHz
RF or Microwave Device Type: WIDE BAND MEDIUM POWER
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,041 - -

Popular Products

Category Top Products

HMC326MS8GETR by Analog Devices

HMC326MS8GETR

Analog Devices

Analog Devices' HMC326MS8GETR is a wide band medium power RF amplifier with 18dB gain and 50 ohm impedance. It operates from 3-4.5GHz, handles up to 15dBm input power, and requires a 5V supply. Ideal for RF & microwave applications requiring high performance in a compact surface mount package.
ADL5536ARKZ-R7 by Analog Devices

ADL5536ARKZ-R7

Analog Devices

ADL5536ARKZ-R7 by Analog Devices is a wide band low power RF amplifier with 18.1 dB gain, suitable for frequencies ranging from 20 MHz to 1000 MHz. It can handle a max input power of 20 dBm and operates in temperatures b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain amplification within the specified frequency range.
A64 by Tyco Electronics M/a-com

A64

Tyco Electronics M/a-com

WIDE BAND LOW POWER; Construction: COMPONENT; Maximum Operating Frequency: 1200 MHz; Maximum Operating Temperature: 85 Cel; Maximum Input Power (CW): 6 dBm; Minimum Operating Frequency: 10 MHz;
TGA2701-SM by Triquint Semiconductor

TGA2701-SM

Triquint Semiconductor

WIDE BAND HIGH POWER; Maximum Input Power (CW): 29 dBm; Construction: COMPONENT; Maximum Operating Frequency: 8500 MHz; Gain: 18 dB; Minimum Operating Frequency: 5900 MHz;
HMC374SC70E by Hittite Microwave

HMC374SC70E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 6; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Package Equivalence Code: TSSOP6,.08;
HMC498LC4TR by Hittite Microwave

HMC498LC4TR

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: CERAMIC; Technology: GAAS; Power Supplies (V): 5;
HMC1082LP4E by Hittite Microwave

HMC1082LP4E

Hittite Microwave

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: GAAS; Maximum Input Power (CW): 20 dBm;
CMPA2738060F by Wolfspeed

CMPA2738060F

Wolfspeed

WIDE BAND HIGH POWER;
MAAM-011101-TR1000 by M/a-com Technology Solutions

MAAM-011101-TR1000

M/a-com Technology Solutions

MAAM-011101-TR1000 by M/a-com Technology Solutions is a wide band low power RF amplifier with 17 dB gain, operating from 4 to 20 GHz. It can handle up to 23 dBm CW input power and operates in temperatures ranging from -40°C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification.
HMC-ALH244 by Analog Devices

HMC-ALH244

Analog Devices

The Analog Devices HMC-ALH244 is a wide band low power RF amplifier with 10 dB gain and max input power of 6 dBm. Operating frequency range from 24 GHz to 40 GHz, ideal for RF & microwave applications. With a temperature range of -55°C to 85°C, it's suitable for various component constructions.
HMC797LP5ETR by Analog Devices

HMC797LP5ETR

Analog Devices

Analog Devices' HMC797LP5ETR is a GAAS technology RF amplifier with 32 terminals, operating b/w -55°C to 85°C. It has a power supply of 10V and max current of 440mA. Ideal for wide band medium power applications, it features a surface mount package body made of plastic/epoxy.
HMC505LP4E by Hittite Microwave

HMC505LP4E

Hittite Microwave

NARROW BAND LOW POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 24; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1;
RFSA2113SR by Rf Micro Devices

RFSA2113SR

Rf Micro Devices

WIDE BAND MEDIUM POWER;
PHA-102+ by Mini-circuits

PHA-102+

Mini-circuits

WIDE BAND LOW POWER;
MGA-30889-TR1G by Broadcom

MGA-30889-TR1G

Broadcom

Broadcom's MGA-30889-TR1G is a GAAS RF amplifier with 14.6dB gain, operating from 40MHz to 2600MHz. It has a max input power of 20dBm and requires a 5V power supply, making it ideal for wideband low-power applications in RF and microwave systems.
HMC311LP3E by Analog Devices

HMC311LP3E

Analog Devices

HMC311LP3E by Analog Devices is a GAAS RF amplifier with 12dB gain, operating from 0-6000MHz. It has a max input power of 10dBm and operates on a 5V power supply. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount package and 50 ohm characteristic impedance.
TQP7M9105 by Qorvo

TQP7M9105

Qorvo

Qorvo's TQP7M9105 RF amplifier offers 19.4 dB gain with a wide band of 50-1500 MHz, handling up to 30 dBm CW input power. Ideal for applications requiring high-performance RF amplification in environments ranging from -40°C to 85°C.
MMG15241HT1 by Freescale Semiconductor

MMG15241HT1

Freescale Semiconductor

WIDE BAND MEDIUM POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 3; Package Body Material: PLASTIC/EPOXY; Characteristic Impedance: 50 ohm; Maximum Supply Current: 105 mA;
SBB-5089Z by Sirenza Microdevices

SBB-5089Z

Sirenza Microdevices

Sirenza Microdevices' SBB-5089Z is a GAAS RF amplifier with 14.5 dB gain, operating from 50 MHz to 6 GHz. It has a max input power of 12 dBm and operates on a 5V supply, making it ideal for wideband low-power applications in RF and microwave systems. The component is designed for surface mount installation and can withstand temperatures ranging from -40°C to 85°C.
TQP3M9037 by Qorvo

TQP3M9037

Qorvo

TQP3M9037 by Qorvo is a wide band medium power RF amplifier with 18.5 dB gain, operating from 700 MHz to 6000 MHz. It has a max input power of 22 dBm and operates at temperatures ranging from -40°C to 105°C. Ideal for applications requiring high frequency amplification in RF and microwave systems.