Texas Instruments - TMS416160A60DGE

  1. Home
  2. Texas Instruments - TMS416160A60DGE
TMS416160A60DGE by Texas Instruments

Image shown is a representation only.

Manufacturer Texas Instruments
Manufacturer's Part Number TMS416160A60DGE
Description DRAMs;
Datasheet TMS416160A60DGE Datasheet
In Stock771
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
771 - -

Popular Products

Category Top Products

MT61K512M32KPA-16:B by Micron Technology

MT61K512M32KPA-16:B

Micron Technology

Micron Technology's MT61K512M32KPA-16:B is a GDDR6 DRAM with 512MX32 organization, operating at 1.25V. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high memory density and fast data access in a compact package.
MT53E128M32D2DS-046WT:A by Micron Technology

MT53E128M32D2DS-046WT:A

Micron Technology

Micron Technology's MT53E128M32D2DS-046WT:A is a LPDDR4 DRAM with 128MX32 organization, operating at 2133 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in compact devices like smartphones and tablets.
MT47H256M8EB-25E:C by Micron Technology

MT47H256M8EB-25E:C

Micron Technology

MT47H256M8EB-25E:C by Micron Technology is a 256MX8 DDR2 DRAM with 1.8V supply, operating at 400MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices like networking equipment and industrial automation systems.
W631GU6NB12I by Winbond Electronics

W631GU6NB12I

Winbond Electronics

W631GU6NB12I by Winbond Electronics is a DDR3L DRAM with 64MX16 organization, operating at a max clock frequency of 800 MHz. It has a memory density of 1Gb and is suitable for industrial temperature grade applications.
K4B2G0846C-HCH9 by Samsung

K4B2G0846C-HCH9

Samsung

Samsung's K4B2G0846C-HCH9 DDR3 DRAM features 256MX8 organization, 667 MHz clock frequency, and 2147483648 bit memory density. Ideal for applications requiring high-speed data processing and storage in devices like computers and servers.
EDB4432BBBJ-1DAUT-F-R by Micron Technology

EDB4432BBBJ-1DAUT-F-R

Micron Technology

Micron Technology's EDB4432BBBJ-1DAUT-F-R is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous operation, self-refresh capability, and single bank page burst access mode. Ideal for automotive applications due to its very thin profile, fine pitch grid array package style.
IS42S16800F-6TL by Integrated Silicon Solution

IS42S16800F-6TL

Integrated Silicon Solution

IS42S16800F-6TL by Integrated Silicon Solution is a 8MX16 Synchronous DRAM with 166 MHz clock frequency. It operates at 3.3V, has 4096 refresh cycles, and supports common I/O type. Ideal for commercial applications requiring fast memory access and low standby current consumption.
MT48LC16M16A2P-6A:GTR by Micron Technology

MT48LC16M16A2P-6A:GTR

Micron Technology

Micron Technology's MT48LC16M16A2P-6A:GTR is a 16MX16 Synchronous DRAM with 16777216 words, 268435456 bit memory density, and 5.4 ns max access time. It operates at 3.3V, has a temperature range of 0-70°C, and is suitable for commercial applications requiring high-speed memory performance.
S27KS0642GABHI020 by Cypress Semiconductor

S27KS0642GABHI020

Cypress Semiconductor

HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; No. of Functions: 1; Package Equivalence Code: BGA24,5X5,40;
IS42S32400F-7TL by Integrated Silicon Solution

IS42S32400F-7TL

Integrated Silicon Solution

IS42S32400F-7TL by Integrated Silicon Solution is a 4MX32 DRAM with 3.3V supply, operating at 143MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT40A512M16LY-062EIT:ETR by Micron Technology

MT40A512M16LY-062EIT:ETR

Micron Technology

Micron Technology's MT40A512M16LY-062EIT:ETR is a DDR4 DRAM with 512MX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. This thin-profile memory module is suitable for applications requiring high-speed data processing in a compact form factor.
MT41J64M16JT-15EAIT:G by Micron Technology

MT41J64M16JT-15EAIT:G

Micron Technology

Micron Technology's MT41J64M16JT-15EAIT:G is a DDR3 DRAM with 64MX16 organization, operating at 667 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT40A1G8WE-083EAAT:BTR by Micron Technology

MT40A1G8WE-083EAAT:BTR

Micron Technology

MT40A1G8WE-083EAAT:BTR by Micron Technology is a DDR4 DRAM with 1GX8 organization, operating at a max clock frequency of 1200.4 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
AS4C8M16S-6TIN by Alliance Memory

AS4C8M16S-6TIN

Alliance Memory

Alliance Memory's AS4C8M16S-6TIN is a 8MX16 Synchronous DRAM with 166 MHz clock frequency, 6 ns access time, and 4096 refresh cycles. Ideal for industrial applications requiring high-speed memory with common I/O type and self-refresh capability. Package style: Small Outline, Thin Profile.
NT6DM32M16BD-T1 by Nanya Technology

NT6DM32M16BD-T1

Nanya Technology

NT6DM32M16BD-T1 by Nanya Technology is a DDR1 DRAM with 32MX16 organization, 16-bit memory width, and 536870912 bit memory density. It operates synchronously at 1.8V with self-refresh capability. Ideal for applications requiring fast access times and high memory capacity in compact devices.
MT40A1G16RC-062EIT:B by Micron Technology

MT40A1G16RC-062EIT:B

Micron Technology

Micron Technology's MT40A1G16RC-062EIT:B is a DDR4 DRAM with 1GX16 organization, operating at up to 1600 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for industrial applications requiring high memory density and fast data processing.
MT46H64M16LFBF-5AIT:B by Micron Technology

MT46H64M16LFBF-5AIT:B

Micron Technology

Micron Technology's MT46H64M16LFBF-5AIT:B is a 64MX16 DDR1 DRAM with 67108864 words. It operates at 200 MHz, has a memory density of 1073741824 bit, and supports a max clock frequency of 200 MHz. Ideal for industrial applications requiring fast data access and high memory capacity.
IS42S16400J-6TLI by Integrated Silicon Solution

IS42S16400J-6TLI

Integrated Silicon Solution

IS42S16400J-6TLI by Integrated Silicon Solution is a 4MX16 Synchronous DRAM with 166 MHz Clock Frequency. Operating at 3.3V, it offers 4096 Refresh Cycles and supports Four Bank Page Burst Access Mode. Ideal for industrial applications requiring high-speed memory performance in compact form factors.
MT40A512M16JY-083EAIT:B by Micron Technology

MT40A512M16JY-083EAIT:B

Micron Technology

Micron Technology's MT40A512M16JY-083EAIT:B is a DDR4 DRAM with 512MX16 organization, operating at up to 1200 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory performance in automotive electronics or industrial systems.
MT53D1024M32D4DT-046AIT:D by Micron Technology

MT53D1024M32D4DT-046AIT:D

Micron Technology

Micron Technology's MT53D1024M32D4DT-046AIT:D is a LPDDR4 DRAM with 1GX32 organization, operating at 2136.7 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high memory density and fast data processing in automotive electronics or industrial devices.