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Manufacturer | Texas Instruments |
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Manufacturer's Part Number | TPIC2302DR |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 1 A; JESD-30 Code: R-PDSO-G8; JEDEC-95 Code: MS-012AA; |
Datasheet | TPIC2302DR Datasheet |
In Stock | 3,330 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | COMMON SOURCE, 3 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Feedback Capacitance (Crss): | 40 pF |
Maximum Drain Current (ID): | 1 A |
JEDEC-95 Code: | MS-012AA |
Polarity or Channel Type: | N-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 60 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 3 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | ISOLATED |
Maximum Power Dissipation Ambient: | .95 W |
Maximum Drain-Source On Resistance: | .475 ohm |