TPIC5223LD by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPIC5223LD
Description	N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .95 W; Peak Reflow Temperature (C): NOT SPECIFIED; JEDEC-95 Code: MS-012AA;
Datasheet	TPIC5223LD Datasheet
In Stock	4,435

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	1 A
Sub-Category:	FET General Purpose Power
Surface Mount:	YES
No. of Terminals:	8
Maximum Power Dissipation (Abs):	.95 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G8
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	.95 W
Maximum Drain-Source On Resistance:	.43 ohm
Maximum Feedback Capacitance (Crss):	50 pF
JEDEC-95 Code:	MS-012AA
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	ESD PROTECTED, LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID):	1 A
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
4,435	$0.997	$4,421.695

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