TPIC5423LDWR by Texas Instruments | Transistors

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Manufacturer	Texas Instruments
Manufacturer's Part Number	TPIC5423LDWR
Description	N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .375 ohm;
Datasheet	TPIC5423LDWR Datasheet
In Stock	3,225

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	125 ns
Maximum Drain Current (ID):	1.25 A
Maximum Pulsed Drain Current (IDM):	4 A
Surface Mount:	YES
Terminal Finish:	NICKEL PALLADIUM GOLD
No. of Terminals:	24
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	70 ns
JESD-30 Code:	R-PDSO-G24
No. of Elements:	4
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	1.39 W
Maximum Drain-Source On Resistance:	.375 ohm
Moisture Sensitivity Level (MSL):	1
Avalanche Energy Rating (EAS):	96 mJ
Maximum Feedback Capacitance (Crss):	75 pF
JEDEC-95 Code:	MS-013AD
Polarity or Channel Type:	N-CHANNEL
JESD-609 Code:	e4
Minimum DS Breakdown Voltage:	60 V
Qualification:	Not Qualified
Additional Features:	ESD PROTECTED

Pricing (USD)

Qty.	Unit Price	Ext. Price
3,225	-	-

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