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| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TPIC5423LDWR |
| Description | N-CHANNEL; Configuration: SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .375 ohm; |
| Datasheet | TPIC5423LDWR Datasheet |
| In Stock | 296 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Configuration: | SEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 125 ns |
| Maximum Drain Current (ID): | 1.25 A |
| Maximum Pulsed Drain Current (IDM): | 4 A |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| No. of Terminals: | 24 |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 70 ns |
| JESD-30 Code: | R-PDSO-G24 |
| No. of Elements: | 4 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | ISOLATED |
| Maximum Power Dissipation Ambient: | 1.39 W |
| Maximum Drain-Source On Resistance: | .375 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 96 mJ |
| Maximum Feedback Capacitance (Crss): | 75 pF |
| JEDEC-95 Code: | MS-013AD |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum DS Breakdown Voltage: | 60 V |
| Qualification: | Not Qualified |
| Additional Features: | ESD PROTECTED |







