Image shown is a representation only.
| Manufacturer | Texas Instruments |
|---|---|
| Manufacturer's Part Number | TPS1100PWR |
| Description | P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .504 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR; |
| Datasheet | TPS1100PWR Datasheet |
| In Stock | 9,984 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Drain Current (ID): | 1.27 A |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| Terminal Finish: | NICKEL PALLADIUM GOLD |
| No. of Terminals: | 8 |
| Maximum Power Dissipation (Abs): | .504 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G8 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain-Source On Resistance: | .4 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Other Names: |
296-13383-2-NDR -296-13383-1 2156-TPS1100PWR -296-13383-1-ND TPS1100PWRG4 -TPS1100PWRG4-NDR 296-13383-1-NDR -TPS1100PWR-NDR TPS1100PWRG4-ND 296-13383-1 296-13383-2 TEXTISTPS1100PWR 296-13383-6-NDR 296-13383-6 -TPS1100PWRG4 |
| Polarity or Channel Type: | P-CHANNEL |
| JESD-609 Code: | e4 |
| Minimum Operating Temperature: | -40 Cel |
| Minimum DS Breakdown Voltage: | 15 V |
| Qualification: | Not Qualified |
| Additional Features: | LOGIC LEVEL COMPATIBLE, ESD PROTECTED |
| Maximum Drain Current (Abs) (ID): | 1.27 A |
| Peak Reflow Temperature (C): | 260 |
