Texas Instruments - TPS1101PWLE

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TPS1101PWLE by Texas Instruments

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Manufacturer Texas Instruments
Manufacturer's Part Number TPS1101PWLE
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .71 W; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet TPS1101PWLE Datasheet
In Stock2,328
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 2.18 A
Sub-Category: Other Transistors
Surface Mount: YES
No. of Terminals: 16
Maximum Power Dissipation (Abs): .71 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G16
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: ISOLATED
Maximum Drain-Source On Resistance: .19 ohm
Polarity or Channel Type: P-CHANNEL
Minimum DS Breakdown Voltage: 15 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE, ESD PROTECTED
Maximum Drain Current (Abs) (ID): 2.18 A
Peak Reflow Temperature (C): NOT SPECIFIED
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