Toshiba - 1SV100

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 60; Nominal Diode Capacitance: 30 pF; Maximum Repetitive Peak Reverse Voltage: 16 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB640E6327HTSA1 by Infineon Technologies is a varactor diode with a min capacitance ratio of 19.5, ideal for frequency tuning applications. It features a small outline package shape, gull wing terminal form, and dual terminals for surface mount configurations. The diode element material is silicon with tin terminal finish in a plastic/epoxy body material.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 5; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .45 pF; Minimum Quality Factor: 10;

Infineon's BB545E7904HTSA1 is a single varactor diode with 20pF capacitance, ideal for ultra high frequency applications. With a temperature range of -55 to 150°C, it features gull wing terminals and silicon element material. This surface mount diode has a small outline package shape and is suitable for RF tuning in various electronic devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 15; Maximum Repetitive Peak Reverse Voltage: 6 V;

MV2109RL by Onsemi is a single varactor diode with a nominal capacitance of 33pF and min breakdown voltage of 30V. It operates at a max temperature of 150 °C, making it suitable for RF tuning applications in various electronic circuits.

MMBV432LT1G by Onsemi is a varactor diode with common cathode, 2 elements configuration. It has a min quality factor of 100 and nominal capacitance of 45.55 pF, suitable for very high frequency applications like RF tuning circuits.

MMBV2101LT1G by Onsemi is a Varactor Diode with 6.8pF capacitance, 30V breakdown voltage, and 450 min quality factor. Ideal for high frequency to ultra-high frequency applications due to its abrupt variable capacitance diode classification. It comes in a small outline package with gull wing terminals for surface mount assembly.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

SMV1249-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 31pF capacitance, 15V breakdown voltage, and -55 to 125°C operating range. It is used in applications requiring variable capacitance diodes for RF tuning circuits.

MMBV809LT1 by Onsemi is a varactor diode with a min quality factor of 75, ideal for ultra high frequency applications. It features a nominal capacitance of 5.3 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in RF circuits. With hyperabrupt variable capacitance classification, this diode offers precise tuning capabilities for high-frequency designs.

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

BBY31TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a compact rectangular package with 3 terminals and surface mount capability. Ideal for tuning circuits, it enhances performance in RF devices.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 15 V; Nominal Diode Capacitance: 81 pF;

LV2209RLRA by Onsemi is a Varactor Diode with 33pF capacitance, 25V breakdown voltage, and 200 min quality factor. Ideal for RF applications due to its variable capacitance feature and can operate at temperatures up to 150 °C. Its through-hole design and tin-lead finish make it suitable for various electronic circuits.

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;