Toshiba - 1SV245(TPH3,F)

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

TIV22 by Texas Instruments is a single varactor diode with 11 pF capacitance, 30 V breakdown voltage, and 0.25 W power dissipation. Ideal for ultra high frequency applications due to its isolated case connection and silicon diode element material.

MMBV3102LT1G by Onsemi is a single hyperabrupt varactor diode with 22pF nominal capacitance, suitable for very high frequency applications. It has a min breakdown voltage of 30V and operates at a max temperature of 125 °C. This small outline diode in gull wing terminal form is surface mountable and has a power dissipation of 0.225W.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30;

MMBV2101L by Onsemi is a varactor diode with 6.8pF nominal capacitance, 30V breakdown voltage, and 450 min quality factor. It is ideal for RF applications due to its variable capacitance feature and small outline package style.

1N5702 by Onsemi is a varactor diode with 375 min quality factor, 22 pF nominal capacitance, and 65 V breakdown voltage. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

MV2105RLRA by Onsemi is a varactor diode with a min quality factor of 400, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 15 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems.

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 9 V; Nominal Diode Capacitance: 39 pF; Terminal Finish: Tin/Lead (Sn/Pb);

MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVD102 is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a max operating temperature of 150 °C, it offers a nominal capacitance of 7 pF and min breakdown voltage of 27 V. This surface-mount diode in microwave package style has a max power dissipation of 0.5 W, making it suitable for high-frequency circuit designs.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 52 pF; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3; Terminal Finish: Tin (Sn);