Microchip Technology - GCX1204-23-0

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

The NXP 934042930135 is a variable capacitance diode ideal for RF tuning applications. It features a max reverse current of 0.01 µA, operates b/w -55 °C to 125 °C, and has a breakdown voltage of 10 V. Its compact surface mount design ensures efficient space utilization in circuits.

BBY40TRL13 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a min capacitance ratio of 8, comes in a small outline package with 3 terminals, and utilizes silicon as the diode element material. Ideal for RF tuning circuits, it offers reliable performance in compact designs.

The Onsemi SVC321A is a varactor diode with a min quality factor of 200, ideal for RF applications. Featuring a max reverse current of 0.1 uA and a min breakdown voltage of 16 V, it operates at temperatures up to 100 °C. Its single configuration and variable capacitance make it suitable for tuning circuits in electronic devices.

The Onsemi SVC321SPAB is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is suitable for applications requiring variable capacitance diodes, such as tuning circuits in electronic devices.

MV2101RL by Onsemi is a Varactor Diode with a min Quality Factor of 450, Nominal Capacitance of 6.8 pF, and Breakdown Voltage of 30 V. It is ideal for applications requiring variable capacitance in electronic circuits due to its high-quality performance and temperature tolerance up to 150 °C.

The Onsemi SVC354R is a varactor diode with a min quality factor of 200, breakdown voltage of 16V, and capacitance ratio of 17.5. It is used in applications requiring variable capacitance diodes for RF tuning circuits due to its small outline package and gull wing terminals.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .45 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 15;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

The Toshiba 1SV228(TPH3,F) Varactor Diode features a common cathode configuration with 2 elements, suitable for very high frequency applications. With a max operating temperature of 125°C, it offers a nominal capacitance of 30.5 pF and a min breakdown voltage of 15V, making it ideal for small outline surface mount designs.

1N4802 by Onsemi is a Varactor Diode with 8.2 pF capacitance, 110 V breakdown voltage, and 0.5 W power dissipation. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification. Operating temperature ranges from -65 to 150 °C.

BBY62TRL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a nominal capacitance of 17.5 pF, a min capacitance ratio of 9.7, and comes in a compact surface mount package with 4 terminals. Ideal for tuning circuits and RF applications, it ensures efficient performance in small electronic devices.

MV2101 by Onsemi is a single varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. With a breakdown voltage of 30 V and abrupt variable capacitance classification, this through-hole diode offers precise tuning capabilities in cylindrical package style.

The Onsemi SVC353S is a Varactor Diode with 3 elements, common cathode config, and min. quality factor of 200. It has a min. breakdown voltage of 16V and diode cap tolerance of 3.31%. Ideal for applications requiring variable capacitance diodes in surface mount packages.

NXP Semiconductors' BB135,115 is a varactor diode with a capacitance ratio of 8.9 and nominal capacitance of 19.25 pF, ideal for ultra-high frequency applications. It operates b/w -55 to 125 °C with a reverse voltage of 30 V, in a small outline package suitable for surface mount assembly.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 35 V; JESD-609 Code: e3;