Toshiba - 1SV284(TPH3)

  1. Home
  2. Toshiba - 1SV284(TPH3)
1SV284(TPH3) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 1SV284(TPH3)
Description VARIABLE CAPACITANCE DIODE; Surface Mount: YES; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 10 V; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet 1SV284(TPH3) Datasheet
NAME DESCRIPTION
Diode Type: VARIABLE CAPACITANCE DIODE
Maximum Repetitive Peak Reverse Voltage: 10 V
Sub-Category: Varactors
Surface Mount: YES
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MDX586D by Texas Instruments

MDX586D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .225 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20;
MV1648 by Onsemi

MV1648

Onsemi

The Onsemi MV1648 is a single varactor diode with 82pF nominal capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.
BB417153 by NXP Semiconductors

BB417153

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
BB189,115 by NXP Semiconductors

BB189,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 14.95 pF;
BBY40,215 by NXP Semiconductors

BBY40,215

NXP Semiconductors

BBY40,215 by NXP Semiconductors is a varactor diode with a max reverse current of 0.01 uA and nominal capacitance of 26 pF. It operates in the very high frequency band and has a min breakdown voltage of 30 V. This diode is ideal for applications requiring variable capacitance in small outline packages.
BB219 by NXP Semiconductors

BB219

NXP Semiconductors

BB219 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.
1SV305,L3F by Toshiba

1SV305,L3F

Toshiba

VARIABLE CAPACITANCE DIODE;
BB156/T3 by NXP Semiconductors

BB156/T3

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MV1650 by Onsemi

MV1650

Onsemi

The Onsemi MV1650 is a single varactor diode with glass package, ideal for applications requiring variable capacitance. With a nominal capacitance of 100pF and min breakdown voltage of 20V, it operates b/w -65 °C to 200°C. Its isolated case connection and wire terminal form make it suitable for diverse electronic circuits.
LV2209RL1 by Onsemi

LV2209RL1

Onsemi

LV2209RL1 by Onsemi is a varactor diode with a min quality factor of 200, nominal capacitance of 33 pF, and a max operating temperature of 150 °C. Ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.
MMBV409LT1 by Onsemi

MMBV409LT1

Onsemi

MMBV409LT1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200 and nominal capacitance of 29 pF. It operates in the very high frequency band, suitable for applications requiring variable capacitance such as RF tuning circuits.
BB804-1 by NXP Semiconductors

BB804-1

NXP Semiconductors

BB804-1 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.02 µA and operates at up to 100 °C. This surface-mount, dual-element diode is ideal for tuning circuits.
BB131 by NXP Semiconductors

BB131

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SMV1408-040LF by Skyworks Solutions

SMV1408-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
MDX582D by Texas Instruments

MDX582D

Texas Instruments

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 30;
MMBV2108LT1G by Onsemi

MMBV2108LT1G

Onsemi

MMBV2108LT1G by Onsemi is a varactor diode with a min quality factor of 300, ideal for high frequency to ultra high frequency applications. It features a nominal capacitance of 27 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.
SVC364M by Onsemi

SVC364M

Onsemi

SVC364M by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode capacitance ratio of 17.5. Ideal for RF applications requiring variable capacitance diodes in small outline packages.
933184920235 by NXP Semiconductors

933184920235

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BB804,215 by NXP Semiconductors

BB804,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC354S by Onsemi

SVC354S

Onsemi

The Onsemi SVC354S is a Varactor Diode with a Min Quality Factor of 200, Breakdown Voltage of 16V, and Capacitance Ratio of 17.5. It is used in RF applications for frequency tuning due to its Variable Capacitance property and small outline package style.