Toshiba - 1SV303(TPL2)

1N5697 by Onsemi is a varactor diode with 8.2 pF nominal capacitance, 65 V breakdown voltage, and -65 to 175 °C operating temp range. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

SVC364L by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 200 min quality factor. It has a min breakdown voltage of 16V and diode cap tolerance of 3.3%. Ideal for applications requiring variable capacitance diodes in surface mount packages.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 20; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

The Toshiba 1SV290 is a varactor diode with a max reverse current of 0.01 uA and a min breakdown voltage of 30 V. Its nominal capacitance is 45.25 pF, making it ideal for applications requiring variable capacitance such as in RF tuning circuits or frequency modulators. The diode's small outline package and surface mount capability make it suitable for compact electronic devices operating at temperatures up to 125°C.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 32 V; Nominal Diode Capacitance: 14.95 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Terminal Finish: TIN; Maximum Repetitive Peak Reverse Voltage: 32 V; JESD-609 Code: e3;

SVC236 by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 70 and Variable Capacitance Diode Classification: ABRUPT. It operates in the VERY HIGH FREQUENCY band, has a Max Reverse Current of 0.05 uA, and is suitable for applications requiring high-frequency signal modulation.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

MMBV609LT1G by Onsemi is a Varactor Diode with 29pF nominal capacitance, 20V breakdown voltage, and 250 min quality factor. It is ideal for Very High Frequency applications due to its Hyperabrupt diode classification and common cathode configuration. The diode's small outline package and gull wing terminal form make it suitable for surface mount designs requiring high-frequency performance.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 45; Nominal Diode Capacitance: .1 pF;

BB405B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 30 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications.

1N5464 by Onsemi is a Varactor Diode with 550 min Quality Factor, 12 pF Nominal Capacitance, and 30 V Breakdown Voltage. Ideal for RF applications due to its ABRUPT Variable Capacitance Classification.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Diode Element Material: SILICON; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;

SVD301 by Onsemi is a single varactor diode with hyperabrupt capacitance classification, ideal for X band applications. Featuring a nominal capacitance of 2.6 pF, it offers a min breakdown voltage of 27 V and max power dissipation of 0.2 W in a microwave package style.

BB119-TAPE-REEL by NXP Semiconductors is a variable capacitance diode ideal for RF applications. It features a max reverse current of 2 µA, operates up to 200 °C, and has a reverse test voltage of 15 V. Its isolated axial design ensures reliable performance in compact circuits.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB249 by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a reverse test voltage of 28 V, and operates up to 100 °C. Ideal for RF tuning circuits, it ensures reliable performance in compact designs.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;