Toshiba - 1SV305(TPL3)

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 25 V; Nominal Diode Capacitance: .2 pF;

MMVL2105T1G by Onsemi is a varactor diode with 15pF nominal capacitance, 30V breakdown voltage, and 0.2W power dissipation. Ideal for RF tuning applications due to its variable capacitance feature in a small outline package.

1N4796 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.005 uA, and nominal capacitance of 47 pF. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

SMV1236-040LF by Skyworks Solutions is a single hyperabrupt varactor diode with 17pF capacitance, suitable for S band applications. It operates b/w -55°C to 175°C, with a breakdown voltage of 15V. This surface-mount chip carrier diode has a power dissipation of 0.25W and no lead terminal form.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BBY31TRL13 by NXP Semiconductors is a variable capacitance diode designed for ultra-high frequency applications. It features a 3-terminal gull-wing configuration in a small rectangular package, made of plastic/epoxy. Ideal for RF tuning and voltage-controlled oscillators, it ensures efficient performance in compact designs.

MV104G by Onsemi is a Varactor Diode with 2 elements, common cathode config, and abrupt variable capacitance classification. It has a min quality factor of 100, nominal capacitance of 39.5 pF, and max power dissipation of 0.28 W. Ideal for applications requiring precise voltage control in RF circuits.

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

MV7404T1 by Onsemi is a single hyperabrupt varactor diode with a min quality factor of 200, ideal for very high frequency applications. It features a nominal capacitance of 120 pF, breakdown voltage of 12 V, and max power dissipation of 0.8 W. This surface-mount diode in small outline package is designed for high-frequency circuit tuning.

MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.

The Onsemi 1N5442 Varactor Diode has a Min Quality Factor of 450, Max Reverse Current of 0.00000002 uA, and Nominal Diode Capacitance of 8.2 pF. It is used in applications requiring variable capacitance diodes for tuning circuits with a voltage range up to 30 V.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

MV104RLRP by Onsemi is a Varactor Diode with 2 elements, offering a min Quality Factor of 100 and a Nominal Capacitance of 39.5 pF. Commonly used in RF applications, it has a Max Operating Temperature of 125 °C and a Min Breakdown Voltage of 32V.

1N5473 by Onsemi is a varactor diode with max reverse current of 0.00000002 uA. It has nominal capacitance of 56 pF and breakdown voltage of 30 V. Ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in communication devices.

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 1.8 pF; Minimum Quality Factor: 3000; Maximum Repetitive Peak Reverse Voltage: 30 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Variable Capacitance Diode Classification: ABRUPT; Maximum Repetitive Peak Reverse Voltage: 15 V;