2SA1162-O,LF by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SA1162-O,LF
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
Datasheet	2SA1162-O,LF Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	80 MHz
Other Names:	2SA1162OLFTR-ND 2SA1162-OLF(BDKR-ND 2SA1162-O(TE85LF)CT 2SA1162-O(TE85L,F) 2SA1162-OLF(BDKR 2SA1162-O,LF(T 2SA1162-OLF(BCT 2SA1162-O(TE85LF)DKR 2SA1162-OLFDKRINACTIVE 2SA1162-OLFDKR 2SA1162-OLFCT 2SA1162-OLF(BTR-ND 2SA1162-OLFTR 2SA1162-O(TE85LF)CT-ND 2SA1162-OLFCTINACTIVE 2SA1162-OLF(BCT-ND 2SA1162-O(TE85LF)DKR-ND 2SA1162-O(TE85LF)TR-ND 2SA1162-OLF(BTR 2SA1162OLFTR 2SA1162-O(TE85LF)TR 2SA1162-O,LF(B 2SA1162-OLFTRINACTIVE
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	70
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.15 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW NOISE
Maximum Operating Temperature:	125 Cel
Maximum Collector-Base Capacitance:	7 pF
Maximum VCEsat:	.3 V
Maximum Power Dissipation Ambient:	.15 W

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