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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SA1162S-Y,LF(D |
| Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Collector Current (IC): .15 A; No. of Terminals: 3; |
| Datasheet | 2SA1162S-Y,LF(D Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 80 MHz |
| Other Names: |
2SA1162-Y(TE85LF)DKR 2SA1162S-YLF(DCT 2SA1162-Y(TE85LF)TR-ND 2SA1162SYLFD 2SA1162-Y(TE85LF)TR 2SA1162-Y(TE85LF)CT 2SA1162S-Y LF(DTR 2SA1162S-Y LF(DTR-ND 2SA1162SYLFTR-ND 2SA1162S-Y LF(DCT-ND 2SA1162-YTE85LF 2SA1162-YCT 2SA1162-YDKR-ND 2SA1162S-Y LF(DCT 2SA1162S-YLF(DTR 2SA1162-Y(TE85LF)CT-ND 2SA1162-Y(T5L,F,T) 2SA1162-YTR 2SA1162S-YLF(DDKR 2SA1162-Y(TE85L,F) 2SA1162-Y(TE85LF)DKR-ND 2SA1162-YDKR 2SA1162S-Y LF(DDKR-ND 2SA1162SYLFTR 2SA1162S-Y LF(DDKR 2SA1162-YTR-ND 2SA1162-YCT-ND |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .15 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | PNP |
| Surface Mount: | YES |
| Minimum DC Current Gain (hFE): | 120 |
| No. of Terminals: | 3 |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Additional Features: | LOW NOISE |








