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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SA1905-Y(TP,Q) |
| Description | PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): 1.3 W; Maximum Collector Current (IC): 5 A; |
| Datasheet | 2SA1905-Y(TP,Q) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 60 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 5 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Polarity or Channel Type: | PNP |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 120 |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 1.3 W |
| Maximum Collector-Emitter Voltage: | 50 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | IN-LINE |
| JESD-30 Code: | R-PSIP-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Collector-Base Capacitance: | 170 pF |
| Maximum VCEsat: | .4 V |
| Maximum Power Dissipation Ambient: | 1.3 W |
