Toshiba - 2SA1943-O(S1,F

  1. Home
  2. Toshiba - 2SA1943-O(S1,F
2SA1943-O(S1,F by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA1943-O(S1,F
Description Power Bipolar Transistors;
Datasheet 2SA1943-O(S1,F Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

JANTX2N3055 by Microsemi

JANTX2N3055

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Terminal Position: BOTTOM; Terminal Form: PIN/PEG;
MJD31CT4-A by STMicroelectronics

MJD31CT4-A

STMicroelectronics

STMicroelectronics' MJD31CT4-A is a NPN BJT transistor with 100V VCEO, 3A IC, and 15W Ptot. Ideal for switching applications, it comes in a small outline package with Gull Wing terminals for surface mounting.
TIP127 by Weitron Technology

TIP127

Weitron Technology

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Style (Meter): FLANGE MOUNT;
TIP127 by Transys Electronics

TIP127

Transys Electronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Package Style (Meter): FLANGE MOUNT;
BD243C by Samsung

BD243C

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
MJD44H11RLG by Onsemi

MJD44H11RLG

Onsemi

MJD44H11RLG by Onsemi is a NPN BJT transistor with 80V VCEO, 8A IC, and 20W Ptot. Ideal for switching applications, it has a hFE of 40 and operates up to 150°C. The GULL WING package style makes it suitable for surface mount designs.
BD14016STU by Fairchild Semiconductor

BD14016STU

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Transistor Element Material: SILICON;
TIP111 by Samsung

TIP111

Samsung

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY;
TIP41C by Changzhou Galaxy Century Microelectronics

TIP41C

Changzhou Galaxy Century Microelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; No. of Terminals: 3;
ULN2803A by Sanken Electric

ULN2803A

Sanken Electric

NPN; Configuration: 8 BANKS, DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): .5 A; JESD-30 Code: R-PDIP-T18; Package Body Material: PLASTIC/EPOXY;
TIP110G by Onsemi

TIP110G

Onsemi

TIP110G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It has a max power dissipation of 50W, hFE of 500, and max collector current of 2A. With a max operating temp of 150°C and Vce of 60V, it's suitable for various electronic projects.
TIP42A by Micro Commercial Components

TIP42A

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Package Style (Meter): FLANGE MOUNT;
JANTXV2N3055 by M/a-com Technology Solutions

JANTXV2N3055

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Reference Standard: MIL-19500; Terminal Position: BOTTOM;
TIP31C by Solid State Devices

TIP31C

Solid State Devices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
TIP142T by Mospec Semiconductor

TIP142T

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 500;
2SC5200 by STMicroelectronics

2SC5200

STMicroelectronics

2SC5200 by STMicroelectronics is a NPN BJT transistor with 150W power dissipation, 230V max collector-emitter voltage, and 15A max collector current. Ideal for switching applications due to its single configuration and 30MHz transition frequency. Package style is flange mount with matte tin terminal finish.
TIP115 by General Transistor

TIP115

General Transistor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
2SC5200 by Inchange Semiconductor

2SC5200

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A;
TIP127 by Rectron

TIP127

Rectron

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; No. of Terminals: 3; Moisture Sensitivity Level (MSL): 1;
TIP125 by Baneasa S A

TIP125

Baneasa S A

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Package Shape: RECTANGULAR; Terminal Position: SINGLE;