Toshiba - 2SA2206(TE12L)

  1. Home
  2. Toshiba - 2SA2206(TE12L)
2SA2206(TE12L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA2206(TE12L)
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 100;
Datasheet 2SA2206(TE12L) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 2 A
Maximum Power Dissipation (Abs): 2.5 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N3906 by Thomson Consumer Electronics

2N3906

Thomson Consumer Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BCY89 by National Semiconductor

BCY89

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .03 A;
5401 by Diodes Incorporated

5401

Diodes Incorporated

Other Transistors;
TIP127 by General Electric Solid State

TIP127

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N4401 by Vishay Intertechnology

2N4401

Vishay Intertechnology

Vishay Intertechnology's 2N4401 NPN transistor has a max power dissipation of 0.35W, min DC current gain of 100, and max collector current of 0.6A. Ideal for applications requiring high frequency operation up to 250MHz in a single configuration at temperatures up to 150°C.
BSS84 by Philips Semiconductors

BSS84

Philips Semiconductors

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (Abs) (ID): .13 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TIP42C by Sinyork

TIP42C

Sinyork

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC846B by Plessey Semiconductors Discrete Components Div

BC846B

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP127 by Unisonic Technologies

TIP127

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Minimum DC Current Gain (hFE): 1000; No. of Elements: 1;
BD139-16 by Motorola

BD139-16

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BC337-16 by Itt Components

BC337-16

Itt Components

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
BC847B by Philips Semiconductors

BC847B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
IRF9530 by Thomson Consumer Electronics

IRF9530

Thomson Consumer Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 88 W; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel;
TIP41C by Inchange Semiconductor

TIP41C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC547C by Synsemi

BC547C

Synsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP42C by Semitronics

TIP42C

Semitronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC817-16 by Vishay Intertechnology

BC817-16

Vishay Intertechnology

BC817-16 by Vishay Intertechnology is an NPN transistor with a max power dissipation of 0.33W and a min DC current gain of 100. It is suitable for surface mount applications and can handle a max collector current of 0.5A.
BD139-10 by Transys Electronics

BD139-10

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
BC856B by Vishay Intertechnology

BC856B

Vishay Intertechnology

Vishay Intertechnology's BC856B is a PNP transistor with a max power dissipation of 0.31W, min DC current gain of 200, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as surface mount technology with a matte tin finish.
BC337-40 by Philips Semiconductors

BC337-40

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;