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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SC5332 |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 14 A; |
| Datasheet | 2SC5332 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 3 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 14 A |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | SWITCHING |
| Sub-Category: | Other Transistors |
| Surface Mount: | NO |
| Terminal Finish: | Tin/Lead (Sn/Pb) |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | 200 W |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| Maximum Turn Off Time (toff): | 3800 ns |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Maximum Power Dissipation Ambient: | 200 W |
| Polarity or Channel Type: | NPN |
| Minimum DC Current Gain (hFE): | 4 |
| JESD-609 Code: | e0 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 800 V |
| Maximum VCEsat: | 3 V |
