Toshiba - 2SC5353

The NXP Semiconductors BU508AW is a single NPN BJT transistor for switching applications. With a max VCEsat of 1V, it can handle up to 8A collector current and 125W power dissipation. Operating at temperatures up to 150°C, it has a max collector-emitter voltage of 700V making it suitable for high-power electronic circuits.

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; No. of Elements: 1; Maximum Collector-Emitter Voltage: 450 V; Transistor Element Material: SILICON;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 4 A;

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 3 A; Transistor Application: AMPLIFIER;

The Onsemi BD13916S is a NPN BJT transistor with max. collector-emitter voltage of 80V and max. collector current of 1.5A, ideal for switching applications. It has a min. DC current gain of 100 and can dissipate up to 12.5W power, suitable for high-power circuits in various electronic devices. The package style is flange mount with through-hole terminals, making it easy to integrate into circuit boards efficiently.

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; JEDEC-95 Code: TO-220AB; Terminal Form: THROUGH-HOLE;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;

TIP117 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W and max. collector current of 4A. Ideal for switching applications, it has a min DC current gain of 500 (hFE) and operates at up to 150°C.

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 12.5 W; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified;

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 12 A; No. of Terminals: 3; No. of Elements: 1;

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 25 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;

BD13916 by Fairchild Semiconductor is a NPN BJT transistor with max. power dissipation of 12.5W and max. collector current of 1.5A, ideal for switching applications. With a min. DC current gain of 100, it operates at up to 150°C and has a max. collector-emitter voltage of 80V in a through-hole package style.

ULN2003AN by Texas Instruments is a NPN BJT transistor with 7 elements and 16 terminals. It has a max VCEsat of 1.6V, IC of 0.5A, and VCE of 50V. Ideal for switching applications due to its complex configuration and silicon element material.

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Maximum Power Dissipation Ambient: 40 W; Transistor Application: AMPLIFIER;

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20.8 W; Maximum Collector Current (IC): .5 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;