Toshiba - 2SD2012(F)

  1. Home
  2. Toshiba - 2SD2012(F)
2SD2012(F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SD2012(F)
Description NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SD2012(F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (Abs): 25 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 100
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC557B by Semiconductors

BC557B

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e0;
BSR16 by National Semiconductor

BSR16

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;
BC547B by Sprague Electric

BC547B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N4401 by STMicroelectronics

2N4401

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BD139-16 by Weitron Technology

BD139-16

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 13 W; Maximum Collector Current (IC): 1.5 A;
TIP147 by Inchange Semiconductor

TIP147

Inchange Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
2N3055 by Boca Semiconductor

2N3055

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP29C by Asi Semiconductor

TIP29C

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
BC547C by Weitron Technology

BC547C

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BFT92WT/R by Philips Semiconductors

BFT92WT/R

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A; No. of Elements: 1;
2N3055 by National Semiconductor

2N3055

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BC807-25 by Weitron Technology

BC807-25

Weitron Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP31C by National Semiconductor

TIP31C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
BC817-40 by Unisonic Technologies

BC817-40

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
BC817-16 by Itt Components

BC817-16

Itt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
BC327-25 by Itt Components

BC327-25

Itt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
TIP125 by National Semiconductor

TIP125

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
SI4532DY by Siliconix

SI4532DY

Siliconix

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e0; Maximum Drain Current (Abs) (ID): 3.9 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS83PE6327 by Infineon Technologies

BSS83PE6327

Infineon Technologies

BSS83PE6327 by Infineon is a P-CHANNEL transistor with a max drain current of 0.33A and power dissipation of 0.36W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C. This surface-mount transistor utilizes metal-oxide semiconductor technology, making it ideal for various electronic circuits.
BD243C by Texas Instruments

BD243C

Texas Instruments

Texas Instruments' BD243C NPN transistor offers 65W power dissipation, 30 min hFE, and 8A max IC. Ideal for applications requiring a single configuration such as amplifiers or power supplies due to its high operating temperature of 150°C.