Toshiba - 2SJ103

  1. Home
  2. Toshiba - 2SJ103
2SJ103 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SJ103
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Finish: Tin/Lead (Sn/Pb); Operating Mode: DEPLETION MODE;
Datasheet 2SJ103 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
JEDEC-95 Code: TO-92
Sub-Category: FET General Purpose Small Signal
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
No. of Terminals: 3
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BSS138/L99Z by National Semiconductor

BSS138/L99Z

National Semiconductor

BSS138/L99Z by National Semiconductor is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.22A ID, and 6 ohm RDS. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring GULL WING terminals and operating up to 150°C.
2N7002 by Nte Electronics

2N7002

Nte Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: SWITCHING; Maximum Drain Current (ID): .115 A; No. of Terminals: 3;
2N7002-7-F by SPC TECHNOLOGY/ MULTICOMP

2N7002-7-F

SPC TECHNOLOGY/ MULTICOMP

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
2N7002-G by Microchip Technology

2N7002-G

Microchip Technology

2N7002-G by Microchip Technology is a N-CHANNEL FET with 60V DS Breakdown Voltage. Ideal for SWITCHING applications, it features SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it has 0.115A Drain Current and 7.5 ohm On Resistance.
ZVP2106ASTZ by Diodes Incorporated

ZVP2106ASTZ

Diodes Incorporated

ZVP2106ASTZ by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 0.28A max drain current, and 5 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.7W at 150°C.
SI2308BDS-T1-GE3 by Vishay Intertechnology

SI2308BDS-T1-GE3

Vishay Intertechnology

SI2308BDS-T1-GE3 by Vishay Intertechnology is a N-channel FET with 60V DS breakdown voltage and 2.3A max drain current, ideal for switching applications. It operates in enhancement mode with a max power dissipation of 1.66W at 150°C, featuring a small outline package style for surface mount assembly.
2N7002 by Bytesonic Electronics

2N7002

Bytesonic Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
BSS138P by NXP Semiconductors

BSS138P

NXP Semiconductors

NXP Semiconductors' BSS138P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.36A ID. Ideal for SWITCHING applications, it features a single configuration with built-in diode and operates in ENHANCEMENT MODE. The transistor's package is surface mountable, with GULL WING terminals and a max drain-source on resistance of 1.6 ohm.
2N7002-T1-E3 by Vishay Intertechnology

2N7002-T1-E3

Vishay Intertechnology

Vishay Intertechnology's 2N7002-T1-E3 is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. With ENHANCEMENT MODE operation, this GULL WING transistor is ideal for small outline surface mount designs up to 150°C.
ZXM61N03FTA by Zetex Plc

ZXM61N03FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; Transistor Application: SWITCHING; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BSS138WQ-13-F by Diodes Incorporated

BSS138WQ-13-F

Diodes Incorporated

BSS138WQ-13-F by Diodes Inc. is a N-channel FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. With 0.2W max power dissipation and -55 to 150°C operating temp range, it's suitable for small outline SMT designs.
BSS83PH6327 by Infineon Technologies

BSS83PH6327

Infineon Technologies

BSS83PH6327 by Infineon Technologies is a P-CHANNEL FET with 60V DS breakdown voltage. It features a single configuration with built-in diode, 0.33A max drain current, and 3 ohm max on resistance. Ideal for small outline applications requiring low power dissipation and high operating temperatures up to 150°C.
IRF7820TRPBF by Infineon Technologies

IRF7820TRPBF

Infineon Technologies

IRF7820TRPBF by Infineon is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It has 3.7A Drain Current, 0.078 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor in GULL WING package is designed for ENHANCEMENT MODE operation.
BSS138BKAHZGT116 by ROHM

BSS138BKAHZGT116

ROHM

ROHM BSS138BKAHZGT116 is a N-CHANNEL FET with 60V DS breakdown voltage, 0.4A ID, and 0.81 ohm RDS. Ideal for SWITCHING applications in small outline packages. Operating range from -55 to 150 °C with AEC-Q101 standard compliance.
FDS9435A by Onsemi

FDS9435A

Onsemi

The Onsemi FDS9435A is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 5.3A Drain Current, 0.05 ohm On Resistance, and operates in ENHANCEMENT MODE. With a max power dissipation of 2.5W and operating temperature range from -55 to 175 °C, it is suitable for various electronic designs requiring high performance in a small outline package.
FDN340P by Onsemi

FDN340P

Onsemi

FDN340P by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2A, operating in ENHANCEMENT MODE at temperatures ranging from -55 to 150 °C. The package is a SMALL OUTLINE with GULL WING terminals and METAL-OXIDE SEMICONDUCTOR technology.
2N7002LT3G by Onsemi

2N7002LT3G

Onsemi

2N7002LT3G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage, 0.115A Drain Current, and 7.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.
BSS138BKVL by Nexperia

BSS138BKVL

Nexperia

Nexperia's BSS138BKVL is a N-channel FET with 60V breakdown voltage and 1.6 ohm on-resistance, ideal for switching applications. It features a single configuration with built-in diode, Gull Wing terminals, and operates in enhancement mode. This small outline transistor is surface mountable and complies with AEC-Q101 and IEC-60134 standards.
2N7002 by Rectron

2N7002

Rectron

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
BS170 by Motorola

BS170

Motorola

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .83 W; Package Body Material: PLASTIC/EPOXY; Terminal Finish: Tin/Lead (Sn/Pb);