2SJ200 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SJ200
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
Datasheet	2SJ200 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	10 A
Sub-Category:	Other Transistors
Polarity or Channel Type:	P-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	180 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	120 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Drain Current (Abs) (ID):	10 A
Case Connection:	DRAIN
Peak Reflow Temperature (C):	NOT SPECIFIED

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