Toshiba - 2SJ338TE16R

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2SJ338TE16R by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SJ338TE16R
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Power Dissipation Ambient: 20 W; Package Shape: RECTANGULAR;
Datasheet 2SJ338TE16R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 1 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 2
Minimum DS Breakdown Voltage: 180 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 20 W
Maximum Drain-Source On Resistance: 5 ohm
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