Toshiba - 2SJ359TP

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2SJ359TP by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SJ359TP
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V; Package Body Material: PLASTIC/EPOXY;
Datasheet 2SJ359TP Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 60 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: .25 ohm
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