2SK1310A by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SK1310A
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Case Connection: SOURCE; Maximum Operating Temperature: 150 Cel;
Datasheet	2SK1310A Datasheet

NAME	DESCRIPTION
Package Body Material:	CERAMIC, METAL-SEALED COFIRED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	12 A
Sub-Category:	FET General Purpose Power
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	4
Minimum DS Breakdown Voltage:	100 V
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	250 W
Terminal Position:	DUAL
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-CDFM-F4
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Operating Mode:	ENHANCEMENT MODE
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	150 Cel
Maximum Drain Current (Abs) (ID):	12 A
Case Connection:	SOURCE

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