Toshiba - 2SK1829TE85L

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2SK1829TE85L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK1829TE85L
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Maximum Drain-Source On Resistance: 40 ohm; Terminal Position: DUAL;
Datasheet 2SK1829TE85L Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .05 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 40 ohm
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