Toshiba - 2SK209GTE85L

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2SK209GTE85L by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK209GTE85L
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: JUNCTION;
Datasheet 2SK209GTE85L Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-236
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Additional Features: LOW NOISE
Maximum Operating Temperature: 125 Cel
Peak Reflow Temperature (C): NOT SPECIFIED
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