Toshiba - 2SK3017(Q)

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2SK3017(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK3017(Q)
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 90 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 8.5 A;
Datasheet 2SK3017(Q) Datasheet
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 90 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 8.5 A
Maximum Drain Current (Abs) (ID): 8.5 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
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